parameter max. units v ds drain- source voltage -30 v i d @ t a = 25c continuous drain current, v gs @ -10v -3.0 i d @ t a = 70c continuous drain current, v gs @ -10v -2.4 a i dm pulsed drain current -24 p d @t a = 25c power dissipation 1.25 p d @t a = 70c power dissipation 0.80 linear derating factor 10 mw/c v gs gate-to-source voltage 20 v t j, t stg junction and storage temperature range -55 to + 150 c parameter max. units r ja maximum junction-to-ambient 100 c/w thermal resistance
irlml5203pbf hexfet power mosfet these p-channel mosfets from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. a thermally enhanced large pad leadframe has been incorporated into the standard sot-23 package to produce a hexfet power mosfet with the industry's smallest footprint. this package, dubbed the micro3 tm , is ideal for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the micro3 allows it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. the thermal resistance and power dissipation are the best available. description ultra low on-resistance p-channel mosfet surface mount available in tape & reel low gate charge lead-free halogen-free v dss r ds(on) max (m i d -30v 98@v gs = -10v -3.0a 165@v gs = -4.5v -2.6a micro3 tm product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -1.3a, v gs = 0v t rr reverse recovery time ??? 17 26 ns t j = 25c, i f = -1.3a q rr reverse recovery charge ??? 12 18 nc di/dt = -100a/s source-drain ratings and characteristics 24 1.3 s d g repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle surface mounted on fr-4 board, t
parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -30 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.019 ??? v/c reference to 25c, i d = -1ma ??? ??? 98 v gs = -10v, i d = -3.0a ??? ??? 165 v gs = -4.5v, i d = -2.6a v gs(th) gate threshold voltage -1.0 ??? -2.5 v v ds = v gs , i d = -250a g fs forward transconductance 3.1 ??? ??? s v ds = -10v, i d = -3.0a ??? ??? -1.0 v ds = -24v, v gs = 0v ??? ??? -5.0 v ds = -24v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? -100 v gs = -20v gate-to-source reverse leakage ??? ??? 100 v gs = 20v q g total gate charge ??? 9.5 14 i d = -3.0a q gs gate-to-source charge ??? 2.3 3.5 nc v ds = -24v q gd gate-to-drain ("miller") charge ??? 1.6 2.4 v gs = -10v t d(on) turn-on delay time ??? 12 ??? v dd = -15v t r rise time ??? 18 ??? i d = -1.0a t d(off) turn-off delay time ??? 88 ??? r g = 6.0 ? t f fall time ??? 52 ??? v gs = -10v c iss input capacitance ??? 510 ??? v gs = 0v c oss output capacitance ??? 71 ??? pf v ds = -25v c rss reverse transfer capacitance ??? 43 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified)
m ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current
irlml5203pbf product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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